Veröffentlichungen Prof. Dr. Alt (Stand: 09/2015) > zurück
Isotopic study of mid-infrared
vibrational modes in GaAs related to carbon and nitrogen impurities, Phys.
Status Solidi B 252,
1827 (2015).
H. Ch. Alt, A. Kersch,and H. E. Wagner:
Structural investigation of the C-O complex in GaAs, AIP Conf. Proc. 1583, 132 (2014).
H. Ch. Alt, A. Kersch,and H. E. Wagner:
Infrared absorption spectroscopy of a carbon-oxygen complex in gallium
arsenide, Phys. Status Solidi
B 250, 324 (2013).
H. Ch. Alt and H. E. Wagner:
Symmetry and structure of N-O shallow donor complexes in silicon, Physica B 407, 2985
(2012).
H. Ch. Alt and H. E. Wagner:
Piezospectroscopy of nitrogen-oxygen shallow donor complexes in silicon, Phys. Rev. B 82,
115203 (2010).
H. Ch. Alt and H. E. Wagner:
Thermal stability and vibrational
spectroscopy of N-O shallow donor centers in silicon, J. Appl. Phys. 106,
103511 (2009).
H. Ch. Alt and H. E. Wagner:
Comparative mid- and far-infrared spectroscopy of
nitrogen-oxygen complexes in silicon: Physica
B 404, 4549 (2009).
H. Ch. Alt, P. Messerer, K. Köhler, and H. Riechert:
H- and D-related mid-infrared absorption
bands in Ga1-yInyAs1-xNx epitaxial
layers, Phys. Status Solidi B 246, 200 (2009).
H. Ch. Alt, P. Messerer, L. Kirste,
K. Köhler, and H. Riechert:
Optical and mass spectrometric investigation of the
interaction of hydrogen with nitrogen in (In)GaAsN layers,
Proceedings of the 29th International
Conference on the Physics of Semiconductors, Rio de Janeiro,
2008.
H. Ch. Alt, H .E. Wagner, W. v. Ammon, F. Bittersberger,
A. Huber, and L. Koester:
Chemical composition of nitrogen-oxygen
shallow donor complexes in silicon, Physica
B 401-402, 130 (2007).
H. Ch. Alt:
Material characterization issues of nitrogen in
silicon, in: Analytical and Diagnostic Techniques for Semiconductor
Materials, Devices, and Processes 7
(The Electrochemical Society, Pennington NJ), p. 149 (2007).
H .E. Wagner, H. Ch. Alt, W. v. Ammon,
F. Bittersberger, A. Huber, and L. Koester:
N-O related shallow donors in silicon: Stoichiometry investigations, Appl. Phys. Lett. 91, 152102 (2007).
H. Ch. Alt, Y. V. Gomeniuk, and U. Kretzer, Charge states and quantitative infrared
spectroscopy of electrically active oxygen centers in gallium arsenide, J.
Appl. Phys. 101, 073516 (2007).
H. Ch. Alt, Y. V. Gomeniuk, and G. Mussler, Splitting of the local mode frequency of substitutional
nitrogen in (Ga, In)(As, N) alloys due to
symmetry lowering, Semicond. Sci. Technol. 21, 1425 (2006).
H. Ch. Alt, Y. V. Gomeniuk, F. Bittersberger, A. Kempf and D. Zemke, Analysis of electrically active N-O complexes in
nitrogen-doped CZ silicon crystals by FTIR spectroscopy, Materials Science
in Semiconductor Processing 9, 114 (2006).
M. Güngerich,
P. J. Klar, W. Heimbrodt, K. Volz, K. Köhler, J. Wagner, A. Polimeni,
M. Capizzi, H. Ch. Alt and Y. V. Gomeniuk, Correlation of band formation and local
vibrational properties of Ga 0.95Al0.05As1-xNx
with 0 < x < 0.03, phys. stat. sol. (c) 3, 619 (2006).
H. Ch. Alt, Y. V. Gomeniuk, F. Bittersberger,
A. Kempf and D. Zemke,
Far-infrared absorption due to electronic transitions of N-O complexes in Czochralski-grown silicon crystals: Influence of
nitrogen and oxygen concentration, Appl. Phys. Lett.
87, 151909 (2005).
H. Ch. Alt, Y. V. Gomeniuk, and G. Mussler, Influence of Indium-Nitrogen Interactions on the
Local Mode Frequency of Nitrogen in GaAs-based Dilute Nitrides, Physics of
Semiconductors: 27th Int. Conf. on the Physics of Semiconductors, ed. J.
Menendez and C. G. Van de Walle (AIP,
Melville, N. Y., 2005), p. 237.
H. Ch. Alt and Y. V. Gomeniuk, Local mode frequencies
of the NAs-In Ga nearest-neighbor
pair in (Ga,In)(As,N) alloys, Phys. Rev. B 70, 161314 (2004).
M. Porrini, M. G. Pretto,
R. Scala, A. V. Batunina,
H. Ch. Alt, and R. Wolf, Measurement of boron and phosphorus concentration in
silicon by low-temperature FTIR spectroscopy, Appl. Phys. A
(2004).
H. Ch. Alt, Infrared absorption due to local vibrational modes of nitrogen in GaAs:N and GaAs-based dilute
nitrides, J. Phys.: Condens. Matter.
16, S 3037 (2004).
H. Ch. Alt, Y. V. Gomeniuk, and B. Wiedemann, Spectroscopic evidence for a nitrogen-gallium
vacancy defect in gallium arsenide, Phys. Rev. B. 69, 125214 (2004).
H. Ch. Alt, Y. Gomeniuk, G. Lenk,
and B. Wiedemann, GaAsN
formation by implantation of nitrogen into GaAs studied by infrared spectroscopy,
Physica B 340-342, 394 (2003).
Y. V. Gomeniuk, H. Ch. Alt, and U. Kretzer, Far-infrared absorption due to shallow acceptors
in semi-insulating GaAs in dependence on EL2 bleaching, phys. stat. sol. (b) 240,
139 (2003).
B. Wiedemann, J. D. Meyer, H. Ch. Alt, and H.
Riemann, Spark source mass spectrometric analysis of low carbon content in
single crystalline silicon, Electrochemical Society Proceedings Volume 2003-03,
83-87 (2003).
H. Ch. Alt, Y. Gomeniuk, B. Wiedemann, and H. Riemann, Method to determine carbon in
silicon by infrared absorption spectroscopy, J. Electrochem.
Soc. 150, G498 (2003).
H. Ch. Alt, Y. Gomeniuk, and U. Kretzer, Far-infrared spectroscopy of shallow acceptors in
semi-insulating GaAs: Evidence for defect interactions with EL2, phys. stat.
sol. (b) 235, 58 (2003).
Hans Christian Alt, Yuri Gomeniuk, Gerhard Ebbinghaus, Arun Ramakrishnan and Henning Riechert,
Quantitative spectroscopy of substitutional nitrogen in GaAs1-xNx epitaxial
layers by local vibrational mode absorption, Semicond.
Sci. Technol. 18, 1 (2003).
U. Kretzer and H. Ch. Alt, Influence of
compensation level on EL2 concentration in semi-insulating GaAs single
crystals, phys. stat. sol. (c) 0, 845 (2003).
H. Ch. Alt, A. Yu. Egorov, H. Riechert, B. Wiedemann, J. D. Meyer, R. W. Michelmann
and K. Bethge, Infrared absorption study of nitrogen
in N-implanted GaAs and epitaxially grown GaAs1-xNx
layers, Appl. Phys. Lett. 77,
3331 (2000).
H. Ch. Alt, B. Wiedemann, J. D. Meyer, R. W. Michelmann
and K. Bethge, Analysis of electrically active carbon
in semi-insulating gallium arsenide by infrared absorption spectroscopy, Jpn. J. Appl. Phys. 38, 6611 (1999).
B. Wiedemann,
G. Rädlinger, H. Ch. Alt, K. G. Heumann
and K. Bethge, Spark source mass spectrometric
assessment of boron and nitrogen concentrations in crystalline gallium
arsenide, Fresenius J. Anal. Chem. 364, 772 (1999).
H. Ch. Alt,
Vibrational excited-state transitions of substitutional carbon in gallium
arsenide, Physica B 273-274, 788 (1999).
H. Ch. Alt, B. Wiedemann, J. D. Meyer, R. W. Michelmann
and K. Bethge, Carbon in semi-insulating arsenide: A
comparative study between FTIR, SSMS and CPAA, in Proc. of the 10th Int. Conf. on
Semiconducting and Insulating Materials, ed. by E. Weber (Inst. of Electrical and Electronics Engineers, NJ, USA, 1998),
p. 824.
H. Ch. Alt, M. Gellon, M. G. Pretto, R. Scala, F. Bittersberger, K. Hesse and A. Kempf, Determination
of shallow dopants in silicon by low-temperature FTIR
spectroscopy, in Characterization and Metrology for ULSI
Technology, ed. by D. G. Seiler, A. C. Diebold, W. M. Bullis,
T. J Shaffner, R. McDonald, and E. J. Walters (AIP, New York, 1998), p. 201.
H. Ch. Alt, B. Wiedemann and K. Bethge,
Spectroscopy of nitrogen-related centers in gallium arsenide, in
Defects in Semiconductors 19, ed. by G. Davies and M. H. Nazare, Materials Science Forum Vol. 258-263 (Trans
Tech, Switzerland, 1997), p. 867.
H. Ch. Alt,
H. Müssig and H. Brugger,
Spectroscopic identification of the SiO2 complex in oxygen-implanted
GaAs:Si, Phys. Rev. Lett. 79, 1074 (1997).
H. Ch. Alt,
H. Müssig and H. Brugger,
Local Mode Spectroscopy of Oxygen-implanted GaAs MBE
Layers, in Proc. of the 9th Int. Conf. on Semiconducting and
Insulating Materials, ed. by Ch. Fontaine (Inst. of Electrical and
Electronics Engineers, NJ, USA, 1996), p. 155.
H. Ch. Alt, Anharmonicity of the CAs
local oscillator in gallium arsenide, in Defects in Semiconductors 18,
ed. by M. Suezawa and H. Katayama-Yoshida, Materials
Science Forum Vol. 196-201 (Trans Tech, Switzerland, 1995), p. 1577.
B. K. Meyer, D. Volm, A. Graber, H. Ch. Alt, T. Detchprohm, A. Amano and I. Akasaki,
Shallow donors in GaN - the binding energy and the
electron effective mass, Solid State Commun. 95, 597 (1995).
M. Linde, H. Ch. Alt and J.-M. Spaeth, The paramagnetic charge
state of substitutional oxygen in GaAs, Appl. Phys. Lett.
67, 662 (1995).
H. Ch. Alt and B. Dischler, Local mode spectroscopy of the carbon acceptor in
GaAs: New experimental aspects, Appl. Phys. Lett. 66, 61 (1995).
W. Stadler, D. M. Hofmann, H. Ch. Alt, T. Muschik,
B. K. Meyer, E. Weigel, G. Müller-Vogt,
M. Salk, E. Rupp and K. W. Benz, Optical investigations of defects in Cd1-xZnxTe,
Phys. Rev. B 51, 10619 (1995).
H. Ch. Alt,
Recombination and optical excitation properties of the Ga-O-Ga center in gallium arsenide, in Defects in
Semiconductors 17, ed. by H. Heinrich and W. Jantsch,
Materials Science Forum Vol. 143-147 (Trans Tech, Switzerland, 1994), p.
283.
C. Frigeri, J. L. Weyher and H. Ch.
Alt, A study of dislocations, precipitates, and deep level EL2 in LEC GaAs grown under Ga-rich
conditions, phys. stat. sol. (a) 138, 657 (1993)
J. L. Weyher,
C. Frigeri, L. Zanotti, H. Ch. Alt, P. van der Wel and P. Gall, Structural and electrical characteristics
of undoped LEC GaAs
crystals grown from slightly Ga-rich melts: new
approach, in Proc. of the 7th Conf. on Semi-Insulating III-V Materials, (IOP, Bristol, 1992), p. 214.
W. Jost, M. Kunzer, U.
Kaufmann, K. Köhler, J. Schneider and H. Ch. Alt, AsGa antisite defects in LT GaAs as studied by magnetic
resonance and magneto-optical techniques, Semicond. Sci. Technol.
7, 1386 (1992).
H. Ch. Alt, Electrically active
oxygen in gallium arsenide, in Defects in Semiconductors 16, ed. by G.
Davies, G. G. DeLeo and M. Stavola,
Materials Science Forum Vol. 83-87 (Trans Tech, Switzerland, 1992), p.
369.
H. Ch. Alt, R. Treichler and J. Völkl,
Calibration of the Fe2+ intracenter
absorption in InP, Appl. Phys. Lett.
59, 3651 (1991).
R. D. Schnell, S. Gisdakis and H. Ch. Alt, Influence of the negative-U OAs defect in GaAs on the isolation behavior of
oxygen-implanted AlGaAs/GaAs heterostructures,
Appl. Phys. Lett. 59, 668
(1991).
H. Ch. Alt, Negative-U properties of off-centre substitutional oxygen in gallium arsenide, Semicond. Sci. Technol. 6, B121 (1991).
U. Kaufmann, E. Klausmann,
J. Schneider and H. Ch. Alt, Negative-U,
off-center OAs in GaAs and its relation to
the EL3 level, Phys. Rev. B 43, 12106 (1991).
M. Müllenborn, H. Ch. Alt and A. Heberle,
Annealing behavior of deep-level defects in semi-insulating gallium arsenide
studied by photoluminescence, infrared absorption, and resisitivity
mapping, J. Appl. Phys. 69, 4310 (1991).
H. Ch. Alt and M.
Maier, Assessment of the boron impurity in semi-insulating gallium arsenide by
localized vibrational mode spectroscopy, Semicond. Sci. Technol.
6, 343 (1991).
H. Ch. Alt, Experimental evidence for
a negative-U center in gallium arsenide related to oxygen, Phys. Rev. Lett. 65, 3421 (1990).
H. Ch. Alt,
Infrared absorption spectroscopy of the gap states of off-center substitutional
oxygen in gallium arsenide, in Proc. of the 20th Int. Conference on
the Physics of Semiconductors, ed. by E. M. Anastassakis
and J. D. Joannnopoulos (World Scientific, Singapore,
1990), p. 734.
H. Ch. Alt, M. Müllenborn and G. Packeiser,
Recombination mechanisms in semi-insulating GaAs studied by room-temperature
photoluminescence mapping, in Proc. of the 6th Conf. on Semi-Insulating
III-V Materials, ed. by A. Milnes and C. J.
Miner (IOP, Bristol, 1990),
p.
309.
H. Ch. Alt, M. Neef, and H. von Philipsborn,
Contrast phenomena of band-band and deep level photoluminescence topographs in annealed semi-insulating GaAs, Appl. Phys. Lett 55, 1972 (1989).
H. Ch. Alt,
Photosensitivity of the 714 and 730 cm-1 absorption
bands in semi-insulating GaAs: evidence for a deep donor involving oxygen,
Appl. Phys. Lett. 54, 1445
(1989).
H. Ch. Alt, H. Schink and G. Packeiser, Relation
between microscopic EL2 fluctuations and nonuniform
properties of GaAs substrates and devices, in Proc. of the 5th Conf. on
Semi-Insulating III-V Materials, ed. by L. Samuelson (IOP,
Bristol, 1988), p. 515.
H. Ch. Alt and H. Schink, Microscopic spatial fluctuations of the EL2 defect
in semi-insulating GaAs: influence on bulk resistivity and correlation with
implant activation, Appl. Phys. Lett. 52, 1661 (1988).
H. Ch. Alt,
Determination of the residual carbon acceptor concentration in semi-insulating
GaAs wafers by IR spectroscopy: accuracy and
detection limits, Semicond. Sci.
and Technol. 3, 54 (1988).
H. Ch. Alt and S. Gisdakis, Homogeneity improvement of semi-insulating GaAs
wafers by high-temperature annealing, in Growth, Characterization,
Processing of III-V Materials with correlation to Device Performances,
ed. by Y. I. Nissim and P. A. Glasow
(Les Editions de Physique, Les Ulis, 1987), p. 263.
A. Winnacker, H. Ch. Alt, S. Gisdakis
and N. M. Haegel, Photoluminescence imaging of
annealed GaAs wafers, in Defect Recognition and Image Processing in III-V
Compounds II, ed. by E. R. Weber (Elsevier, Amsterdam, 1987), p. 249.
H. Ch. Alt and G. Packeiser, Two-dimensional high-resolution EL2 topography
in thin semi-insulating LEC-grown GaAs wafers, in Extended
Abstracts of the 18th Conf. on Solid State Devices and Materials
(Tokyo, 1986), p. 659.
H. Ch. Alt and G. Packeiser, High-resolution imaging of the EL2 distribution
in thin semi-insulating GaAs wafers: a comparison with x-ray topography, J.
Appl. Phys. 60, 2954 (1986).
H. Ch. Alt and L. Tapfer, Photoluminescence observation of the A, B, C exciton system in nitrogen implanted silicon, in Proc.
of the 13th Int. Conf. on Defects in Semiconductors, ed. by L. C. Kimerling and J. M. Parsey (AIME, New York, 1985), p. 833.
L. Tapfer and H. Ch. Alt, X-ray diffraction study of
self-implanted silicon, in Proc. of the 17th Int. Conference on the
Physics of Semiconductors, ed. by J. D. Chadi and
W. A. Harrison (Springer, New York, 1985), p. 1509.
H. Ch. Alt and L. Tapfer, Photoluminescence study of nitrogen implanted
silicon, Appl. Phys. Lett. 45,
426 (1984).
H.-U. Habermeier, H. Ch. Alt and L. Tapfer,
Deformation of silicon wafers by thermal oxidation, J. Electrochem.
Soc. 130, 1445 (1983).
H. Ch. Alt and J. Kalus, Stress distribution in cylindrical windows for
optical high-pressure cells, Rev. Sci. Instrum. 53, 1235 (1982).
H. Ch. Alt and J. Kalus, X-ray powder diffraction investigation on
naphthalene up to 0.5 GPa, Acta Cryst. B 38,
2595 (1982).
H. Ch. Alt and J. Kalus, A new helium gas high-pressure cell for accurate
x-ray powder diffraction studies, J. Phys. E: Sci. Instrum.
15, 653 (1982).
H. Ch. Alt, X-ray
powder diffraction on naphthalene under high pressure, in High Pressure in
Research and Industry, ed. by C.-M. Backman, T. Johannisson and L. Tegner
(Uppsala, 1982), p. 556.
J. Kalus and H. Ch. Alt, Tests of pressure cells for
neutron-scattering experiments, High Temperatures-High Pressures 13, 329
(1981).
W. Adlhart, H. Ch. Alt and G. Fritsch, Thermal diffuse x-ray scattering from sodium single crystals, J. Phys. F: Metal Phys. 7, 2467 (1977).