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Veröffentlichungen
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Piezospectroscopy and first-principles
calculations of the nitrogen-vacancy
center in gallium arsenide
Nicola
Kovac, Christopher Künneth, and Hans Christian Alt
J. Appl.
Phys. 123, 161583 (2018)
Symmetry and structure of carbon-nitrogen
complexes in gallium arsenide
from infrared spectroscopy and first-principles calculations
Christopher
Künneth, Simon Kölbl, Hans Edwin Wagner, Volker
Häublein,
Alfred Kersch, and Hans Christian Alt
J. Appl.
Phys. 123, 161553 (2018)
N-O
shallow donor complexes in silicon
Hans
Christian Alt, Hans Edwin Wagner, Yuri Gomeniuk
The 7th Int.
Symp. on Advanced Science and Technology of Silicon Materials, 27 (2016)
Growth
and characterization of indium doped silicon single crystals at
industrial scale
Stephan
Haringer, Armando Giannattasio, Hans Christian Alt, and Roberto Scala
Jap. J. Appl. Phys. 55, 031305 (2016)
Isotopic
study of mid-infrared vibrational modes in GaAs related to carbon and
nitrogen impurities
H. Ch.
Alt, H. E. Wagner, A. Glacki,
Ch.
Frank-Rotsch, and
V. Häublein
Phys.
Status Solidi
B 252, 1827
(2015)
Structural
investigation of the C-O complex in GaAs
H. Ch. Alt, A. Kersch,and
H.
E. Wagner
AIP
Conf. Proc. 1583,
132 (2014)
Infrared
absorption spectroscopy of a carbon-oxygen complex in gallium arsenide
H.
Ch.
Alt, A. Kersch,and
H. E. Wagner
Phys. Status Solidi
B 250, 324
(2013)
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